FQU1N50, FQU1N50A, FQU1N50B Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQU1N50, FQU1N50A, FQU1N50B Datasheet download
Part Number: FQU1N50
MFG: FAIRC
Package Cooled: .
D/C: 06+
MFG:FAIRC Package Cooled:. D/C:06+
FQU1N50, FQU1N50A, FQU1N50B Datasheet download
MFG: FAIRC
Package Cooled: .
D/C: 06+
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Datasheet: FQU1N50
File Size: 758153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQU1N50B
File Size: 621247 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Symbol |
Parameter |
FQD1N50 / FQU1N50 |
Units | |
VDSS |
Drain-Source Voltage |
500 |
V | |
ID |
Drain Current |
- Continuous (TC = 100°C) |
1.1 |
A |
|
- Continuous (TC = 25°C) |
0.7 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
4.4 |
A | |
VGSS |
Gate-Source Voltage |
± 30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
80 |
mJ | |
IAR |
Avalanche Current (Note 1) |
1.1 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
2.5 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
Power Dissipation (TC = 25°C) |
25 |
W | ||
0.2 | ||||
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |