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FQU13N06, FQU13N06L, FQU13N06LTU

Table of contents:
Info of FQU13N06
Info of FQU13N06L
Info of FQU13N06LTU

FQU13N06, FQU13N06L, FQU13N06LTU Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:08+

FQU13N06, FQU13N06L, FQU13N06LTU Picture

FQU13N06, FQU13N06L, FQU13N06LTU Datasheet download

Five Points

Part Number: FQU13N06

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 08+

Description: MOSFET N-CH 60V 11A IPAK

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FQU13N06 General Description

These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as DC/DCconverters, high efficiency switching for powermanagement in portable and battery operated products.

FQU13N06 Maximum Ratings

Symbol	Parameter	FQD13N06/FQU13N06	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current- Continuous (T_C= 25) - Continuous (T_C= 100)	10	A
I_D		6.3	A
I_DM	Drain Current Pulsed (Note 1)	40	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	85	mJ
I_AR	Avalanche Current (Note 1)	10	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_A= 25) *	2.5	W
	Power Dissipation (T_C= 25) - Derate above 25	28	W
	Power Dissipation (T_C= 25) - Derate above 25	0.22	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximumleadtemperature for soldering purposes, 1/8" from case for 5 seconds	300

FQU13N06 Features

10A, 60V, R_DS(on)= 0.14 @V_GS = 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical 15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

FQU13N06L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

FQU13N06L Maximum Ratings

Symbol		Parameter		FQD13N06L / FQU13N06L	Units
V_DSS		Drain-Source Voltage		50	V
I_D		Drain Current	- Continuous (TC =25°C)	11	A
			- Continuous (TC = 100°C)	7	A
I_DM		Drain Current Pulsed (Note 1)		44	A
V_GSS		Gate-Source Voltage		± 20	V
E_AS		Single Pulsed Avalanche Energy (Note 2)		90	mJ
I_AR		Avalanche Current (Note 1)		11	A
E_AR		Repetitive Avalanche Energy (Note 1)		2.8	mJ
d _v/dt		Peak Diode Recovery dv/dt (Note 3)		7.0	V/ns
P_D	Power Dissipation (TA = 25°C)			2..5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C			28 0.22	W W/°C
T_{J, TSTG}	Operating and Storage Temperature Range			-55 to +150	°C
T_L		Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQU13N06L Features

• 11A, 60V, RDS(on) = 0.115 @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQU13N06LTU Parameters

Technical/Catalog Information	FQU13N06LTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	115 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6.4nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU13N06LTU FQU13N06LTU

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