MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FQU17N08L, FQU17P06, FQU17P06TU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: MOSFET P-CHAN 60V 12A IPAK
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PDF/DataSheet Download
Datasheet: FQU17N08L
File Size: 568907 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU17P06
File Size: 698578 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,high efficiency switching for DC/DC converters, and DC motor control.
| Symbol | Parameter | FQD17N08L /FQU17N08L | Units |
| VDSS | Drain-Source Voltage | 80 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
12.9 | A |
| 8.2 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 51.6 | A |
| VGSS | Gate-Source Voltage | ±20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ |
| IAR | Avalanche Current (Note 1) | 12.9 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
40 | W | |
| 0.32 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter | FQD17P06 /FQU17P06 | Units |
| VDSS | Drain-Source Voltage | -60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-12 | A |
| -7.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -48 | A |
| VGSS | Gate-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 300 | mJ |
| IAR | Avalanche Current (Note 1) | -12 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -7.0 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
44 | W | |
| 0.35 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
| Technical/Catalog Information | FQU17P06TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 135 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU17P06TU FQU17P06TU |
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