Position: Home > DataSheet > Index F > FQU Series > FQU10N20C, FQU10N20CTU, FQU10N20L

Low Cost Custom Prototype PCB Manufacturer

FQU10N20C, FQU10N20CTU, FQU10N20L

Table of contents:
Info of FQU10N20C
Info of FQU10N20CTU
Info of FQU10N20L

FQU10N20C, FQU10N20CTU, FQU10N20L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQU10N20C, FQU10N20CTU, FQU10N20L Picture

FQU10N20C, FQU10N20CTU, FQU10N20L Datasheet download

Five Points

Part Number: FQU10N20C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 200V 7.8A IPAK

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQU10N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for interrupted power supplies and motor controls.

FQU10N20C Maximum Ratings

Symbol	Parameter	FQD10N20C / FQU10N20C	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C= 25°C) - Continuous (T_C = 100°C)	7.8	A
I_D		5.0	A
I_DM	Drain Current - Pulsed (Note 1)	31.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	210	mJ
I_AR	Avalanche Current (Note 1)	7.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	50	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.4	W/°C
TJ, T_STG	Operating and Storage Temperature Range	-55to+150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, R_G= 25 Ω, Starting T_J= 25°C
3. I_SD 9.5A, di/dt 300A/µs, VDD B_VDSS, Starting T_J = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature

FQU10N20C Features

• 7.8A, 200V, RDS(on) = 0.36Ω @V_GS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQU10N20CTU Parameters

Technical/Catalog Information	FQU10N20CTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	7.8A
Rds On (Max) @ Id, Vgs	360 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	510pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU10N20CTU FQU10N20CTU

FQU10N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

FQU10N20L Maximum Ratings

Symbol	Parameter		FQD10N20L / FQU10N20L	Units
V_DSS	Drain-Source Voltage		200	V
I_D	Drain Current	- Continuous (TC =25°C)	7.6	A
	Drain Current	- Continuous (TC = 100°C)	4.8	A
I_DM	Drain Current Pulsed (Note 1)		30.4	A
V_GSS	Gate-Source Voltage		± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		180	mJ
I_AR	Avalanche Current (Note 1)		7.6	A
E_AR	Repetitive Avalanche Energy (Note 1)		5.1	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		5.5	V/ns
P_D	Power Dissipation (TA = 25°C)		2.5	W
	Power Dissipation (TC = 25°C)		51	W
	- Derate above 25°C		0.4	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQU10N20L Features

• 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components