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FQU1N80, FQU1N80TU, FQU1P50

Table of contents:
Info of FQU1N80
Info of FQU1N80TU
Info of FQU1P50

FQU1N80, FQU1N80TU, FQU1P50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQU1N80, FQU1N80TU, FQU1P50 Datasheet download

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Part Number: FQU1N80

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 800V 1A IPAK

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FQU1N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQU1N80 Maximum Ratings

Symbol	Parameter	FQD1N80 / FQU1N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	1.0	A
I_D		0.63	A
I_DM	Drain Current - Pulsed (Note 1)	4.0	A
V_GSS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	90	mJ
I_AR	Avalanche Current (Note 1)	1.0	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_A = 25) *	2.5	W
	Power Dissipation (T_C = 25) - Derate above 25	45	W
	Power Dissipation (T_C = 25) - Derate above 25	0.36	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds	300

FQU1N80 Features

• 1.0A, 800V, R_DS(on) = 20Ω @V_GS = 10 V
• Low gate charge ( typical 5.5nC)
• Low Crss ( typical 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQU1N80TU Parameters

Technical/Catalog Information	FQU1N80TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	195pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.2nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU1N80TU FQU1N80TU

FQU1P50 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQU1P50 Maximum Ratings

Symbol		Parameter		FQD1P50 / FQU1P500	Units
V_DSS		Drain-Source Voltage		-500	V
I_D		Drain Current	- Continuous (TC = 100°C)	-1.2	A
			- Continuous (TC = 25°C)	-0.76	A
I_DM		Drain Current Pulsed (Note 1)		-4.8	A
V_GSS		Gate-Source Voltage		± 30	V
E_AS		Single Pulsed Avalanche Energy (Note 2)		110	mJ
I_AR		Avalanche Current (Note 1)		-1.2	A
E_AR		Repetitive Avalanche Energy (Note 1)		3.8	mJ
d _v/dt		Peak Diode Recovery dv/dt (Note 3)		-4.5	V/ns
P_D T_{J, TSTG}	Power Dissipation (TA = 25°C)			2.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C			38	W W/°C
				0.3
	Operating and Storage Temperature Range			-55 to +150	°C
T_L		Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds		300	°C

FQU1P50 Features

• -1.2A, -500V, RDS(on) = 10.5 @VGS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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