FQU1N50BTU, FQU1N60, FQU1N60B Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:. D/C:09+
FQU1N50BTU, FQU1N60, FQU1N60B Datasheet download
Part Number: FQU1N50BTU
MFG: FAIRCHILD
Package Cooled: .
D/C: 09+
FQU1N50BTU, FQU1N60, FQU1N60B
- Table of contents:
Info of FQU1N50BTU
Info of FQU1N60
Info of FQU1N60B
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About FQU10N20
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU1N60
PDF/DataSheet Download
Datasheet: FQU1N60
File Size: 556854 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU10N20
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQU1N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQU1N60 Maximum Ratings
|
Symbol |
Parameter |
FQD1N60C/ FQU1N60C |
Units | ||
|
VDSS |
Drain-Source Voltage |
600 |
V | ||
|
ID |
Drain Current |
- Continuous (TC = 100°C) |
1.0 |
A | |
|
|
- Continuous (TC = 25°C) |
0.63 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
4.0 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 30 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
50 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
1.0 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.0 |
mJ | ||
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | ||
|
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | ||
|
Power Dissipation (TC = 25°C) |
30 |
W/°C | |||
|
0.24 | |||||
|
Operating and |
-55 to +150 |
°C | |||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | ||
FQU1N60 Features
• 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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