FQU14N15, FQU16N15, FQU17N08 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:TO-
FQU14N15, FQU16N15, FQU17N08 Datasheet download
Part Number: FQU14N15
MFG: Fairchild
Package Cooled: N/A
D/C: TO-
FQU14N15, FQU16N15, FQU17N08
- Table of contents:
Info of FQU14N15
Info of FQU16N15
Info of FQU17N08
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About FQU14N15
PDF/DataSheet Download
Datasheet: FQU14N15
File Size: 796300 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU16N15
PDF/DataSheet Download
Datasheet: FQU16N15
File Size: 747747 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU17N08
PDF/DataSheet Download
Datasheet: FQU17N08
File Size: 609557 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQU17N08 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,high efficiency switching for DC/DC converters, and DC motor control.
FQU17N08 Maximum Ratings
| Symbol | Parameter | FQD17N08 /FQU17N08 | Units |
| VDSS | Drain-Source Voltage | 80 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
12.9 | A |
| 8.2 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 51.6 | A |
| VGSS | Gate-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ |
| IAR | Avalanche Current (Note 1) | 12.9 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
44 | W | |
| 0.32 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU17N08 Features
• 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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