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FQU18N20V2, FQU19N10, FQU19N10L

Table of contents:
Info of FQU18N20V2
Info of FQU19N10
Info of FQU19N10L

FQU18N20V2, FQU19N10, FQU19N10L Selling Leads, Datasheet

Package Cooled:TO-251 D/C:09+

FQU18N20V2, FQU19N10, FQU19N10L Datasheet download

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Part Number: FQU18N20V2

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Package Cooled: TO-251

D/C: 09+

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FQU18N20V2 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency

FQU18N20V2 Maximum Ratings

Symbol	Parameter		FQD18N20V2/ FQU18N20V2	Units
V_DSS	Drain-Source Voltage		200	V
I_D	Drain Current	- Continuous (TC = 100°C)	15	A
	Drain Current	- Continuous (TC = 25°C)	9.75	A
I_DM	Drain Current Pulsed (Note 1)		60	A
V_GSS	Gate-Source Voltage		± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		340	mJ
I_AR	Avalanche Current (Note 1)		15	A
E_AR	Repetitive Avalanche Energy (Note 1)		8.3	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		6.5	V/ns
P_D T_{J, TSTG}	Power Dissipation (TA = 25°C)		2.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C		83	W W/°C
	Power Dissipation (TC = 25°C) - Derate above 25°C		0.67	W W/°C
	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds		300	°C

FQU18N20V2 Features

• 15A, 200V, RDS(on) = 0.14 @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQU19N10 General Description

FQU19N10 Maximum Ratings

Symbol	Parameter		FQD19N10 / FQU19N10	Units
V_DSS	Drain-Source Voltage		100	V
I_D	Drain Current	- Continuous (TC =25°C)	15.6	A
	Drain Current	- Continuous (TC = 100°C)	9.8	A
I_DM	Drain Current Pulsed (Note 1)		62.4	A
V_GSS	Gate-Source Voltage		± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		220	mJ
I_AR	Avalanche Current (Note 1)		15.5	A
E_AR	Repetitive Avalanche Energy (Note 1)		5.0	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		6.0	V/ns
P_D	Power Dissipation (TA = 25°C)		2.5	W
	Power Dissipation (TC = 25°C)		50	W
	- Derate above 25°C		0.4	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQU19N10 Features

• 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQU19N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQU19N10L Maximum Ratings

Symbol	Parameter		FQD19N10L / FQU19N10L	Units
V_DSS	Drain-Source Voltage		100	V
I_D	Drain Current	- Continuous (TC =25°C)	15.5	A
	Drain Current	- Continuous (TC = 100°C)	9.8	A
I_DM	Drain Current Pulsed (Note 1)		62.4	A
V_GSS	Gate-Source Voltage		± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		220	mJ
I_AR	Avalanche Current (Note 1)		15.6	A
E_AR	Repetitive Avalanche Energy (Note 1)		5.0	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		6.0	V/ns
P_D	Power Dissipation (TA = 25°C)		2.5	W
	Power Dissipation (TC = 25°C)		50	W
	- Derate above 25°C		0.4	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQU19N10L Features

• 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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