MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:2004
FQU11P06TU, FQU12N20, FQU12N20L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-251
D/C: 2004
Description: MOSFET P-CH 60V 9.4A IPAK
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PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU12N20
File Size: 711617 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU12N20L
File Size: 621425 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQU11P06TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 9.4A |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU11P06TU FQU11P06TU |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
|
Symbol |
Parameter |
FQD12N20L / FQU12N20L |
Units | ||
|
VDSS |
Drain-Source Voltage |
200 |
V | ||
|
ID |
Drain Current |
- Continuous (TC =25°C) |
9.0 |
A | |
|
|
- Continuous (TC = 100°C) |
5.7 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
36 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 20 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
9.0 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.5 |
mJ | ||
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | ||
|
PD |
Power Dissipation (TA = 25°C) |
2..5 |
W | ||
|
Power Dissipation (TC = 25°C) |
55 |
W | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C | ||
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