Features: 10A, 60V, RDS(on)= 0.14 @VGS = 10 VLow gate charge ( typical 5.8 nC)Low Crss ( typical 15 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol Parameter FQD13N06/FQU13N06 Units VDSS Drain-Source Voltage 60 V ID Drain C...
FQU13N06: Features: 10A, 60V, RDS(on)= 0.14 @VGS = 10 VLow gate charge ( typical 5.8 nC)Low Crss ( typical 15 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol Par...
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Symbol |
Parameter |
FQD13N06/FQU13N06 |
Units |
VDSS |
Drain-Source Voltage |
60 |
V |
ID |
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100) |
10 |
A |
6.3 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
40 |
A |
VGSS |
Gate-Source Voltage |
± 25 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
85 |
mJ |
IAR |
Avalanche Current (Note 1) |
10 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
2.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
PD |
Power Dissipation (TA = 25) * |
2.5 |
W |
Power Dissipation (TC = 25)
- Derate above 25 |
28 |
W | |
0.22 |
W/ | ||
TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL |
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effecttransistors of FQU13N06 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQU13N06 has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. FQU13N06 is wellsuited for low voltage applications such as DC/DCconverters, high efficiency switching for powermanagement in portable and battery operated products.