Features: • 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirement allowing direct opration from logic driversS...
FQU12N20L: Features: • 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved d...
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Symbol |
Parameter |
FQD12N20L / FQU12N20L |
Units | ||
VDSS |
Drain-Source Voltage |
200 |
V | ||
ID |
Drain Current |
- Continuous (TC =25°C) |
9.0 |
A | |
|
- Continuous (TC = 100°C) |
5.7 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
36 |
A | ||
VGSS |
Gate-Source Voltage |
± 20 |
V | ||
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | ||
IAR |
Avalanche Current (Note 1) |
9.0 |
A | ||
EAR |
Repetitive Avalanche Energy (Note 1) |
5.5 |
mJ | ||
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | ||
PD |
Power Dissipation (TA = 25°C) |
2..5 |
W | ||
Power Dissipation (TC = 25°C) |
55 |
W | |||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQU12N20L are produced using Fairchild's proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU12N20L is well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.