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FQA11N90, FQA11N90C, FQA12N60

Table of contents:
Info of FQA11N90
Info of FQA11N90C
Info of FQA12N60

FQA11N90, FQA11N90C, FQA12N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:04+

FQA11N90, FQA11N90C, FQA12N60 Datasheet download

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Part Number: FQA11N90

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 04+

Description: MOSFET N-CH 600V 12A TO-3P

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FQA11N90 Parameters

Technical/Catalog Information	FQA11N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	11.4A
Rds On (Max) @ Id, Vgs	960 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	94nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA11N90 FQA11N90

FQA11N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQA11N90 Maximum Ratings

Symbol	Parameter	FQA11N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.4	A
ID		7.2	A
IDM	Drain Current - Pulsed (Note 1)	45.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
IAR	Avalanche Current (Note 1)	11.4	A
EAR	Repetitive Avalanche Energy (Note 1)	30	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	300	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA11N90 Features

• 11.4A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQA11N90C Parameters

Technical/Catalog Information	FQA11N90C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Other Names	FQA11N90C FQA11N90C

FQA11N90C General Description

FQA11N90C Maximum Ratings

Symbol	Parameter	FQA11N90C	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.0	A
ID		6.9	A
IDM	Drain Current - Pulsed (Note 1)	44.0	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	960	mJ
IAR	Avalanche Current (Note 1)	11.0	A
EAR	Repetitive Avalanche Energy (Note 1)	30	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	300	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA11N90C Features

• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQA12N60 Parameters

Technical/Catalog Information	FQA12N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	700 mOhm @ 6A,10V
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA12N60 FQA12N60

FQA12N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA12N60 Maximum Ratings

Symbol	Parameter	FQA10N80	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	12	A
I_D		7.6	A
I_DM	Drain Current - Pulsed (Note 1)	48	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	790	mJ
I_AR	Avalanche Current (Note 1)	12	A
E_AR	Repetitive Avalanche Energy (Note 1)	24	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	240	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.92	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA12N60 Features

* 12A, 600V, R_DS(on) = 0.7 @V_GS = 10 V
* Low Crss ( typical 25 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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