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FQA10N80_F109, FQA10N80C_F109, FQA11N90_F109

Table of contents:
Info of FQA10N80_F109
Info of FQA10N80C_F109
Info of FQA11N90_F109

FQA10N80_F109, FQA10N80C_F109, FQA11N90_F109 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PN D/C:2010+

FQA10N80_F109, FQA10N80C_F109, FQA11N90_F109 Picture

FQA10N80_F109, FQA10N80C_F109, FQA11N90_F109 Datasheet download

Five Points

Part Number: FQA10N80_F109

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PN

D/C: 2010+

Description: MOSFET N-CH 900V 11.4A TO-3P

Price Break

450

Unit Price

1.74231

Extended Price

784.04

(All prices are in USD) Prices for reference only

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FQA10N80_F109 Parameters

Technical/Catalog Information	FQA10N80_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	9.8A
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N80_F109 FQA10N80_F109

FQA10N80C_F109 Parameters

Technical/Catalog Information	FQA10N80C_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N80C_F109 FQA10N80C_F109

FQA11N90_F109 Parameters

Technical/Catalog Information	FQA11N90_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	11.4A
Rds On (Max) @ Id, Vgs	960 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	94nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA11N90_F109 FQA11N90_F109

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