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FQA10N60, FQA10N60C, FQA10N80

Table of contents:
Info of FQA10N60
Info of FQA10N60C
Info of FQA10N80

FQA10N60, FQA10N60C, FQA10N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+

FQA10N60, FQA10N60C, FQA10N80 Datasheet download

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Part Number: FQA10N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 08+

Description: MOSFET N-CH 800V 9.8A TO-3P

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FQA10N60C Parameters

Technical/Catalog Information	FQA10N60C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	730 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2040pF @ 25V
Power - Max	192W
Packaging	Tube
Gate Charge (Qg) @ Vgs	57nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N60C FQA10N60C

FQA10N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA10N60C Maximum Ratings

Symbol	Parameter	FQA10N60C	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	10	A
I_D		6	A
I_DM	Drain Current - Pulsed (Note 1)	40	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	700	mJ
I_AR	Avalanche Current (Note 1)	10	A
E_AR	Repetitive Avalanche Energy (Note 1)	19.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	192	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.53	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA10N60C Features

* 10A, 600V, R_DS(on) = 0.73 @V_GS = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA10N80 Parameters

Technical/Catalog Information	FQA10N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	9.8A
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N80 FQA10N80

FQA10N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA10N80 Maximum Ratings

Symbol	Parameter	FQA10N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	9.8	A
I_D		6.19	A
I_DM	Drain Current - Pulsed (Note 1)	39.8	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	920	mJ
I_AR	Avalanche Current (Note 1)	9.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	24	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	240	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.92	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA10N80 Features

* 9.8A, 800V, R_DS(on) = 1.05 @V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical 24 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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