FQA10N80

MOSFET 800V N-Channel QFET

product image

FQA10N80 Picture
SeekIC No. : 00159878 Detail

FQA10N80: MOSFET 800V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA10N80
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/7

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.8 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.05 Ohms
Package / Case : TO-3P
Continuous Drain Current : 9.8 A


Features:

* 9.8A, 800V, RDS(on)  = 1.05  @VGS  = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical  24 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol
Parameter
FQA10N80
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
9.8
A
6.19
A
IDM
Drain Current - Pulsed             (Note 1)
39.8
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
920
mJ
IAR
Avalanche Current                   (Note 1)
9.8
A
EAR
Repetitive Avalanche Energy         (Note 1)
24
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
4.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
240
W
1.92
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA10N80 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQA10N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA10N80 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.




Parameters:

Technical/Catalog InformationFQA10N80
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C9.8A
Rds On (Max) @ Id, Vgs1.05 Ohm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds 2700pF @ 25V
Power - Max240W
PackagingTube
Gate Charge (Qg) @ Vgs71nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA10N80
FQA10N80



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Motors, Solenoids, Driver Boards/Modules
Cables, Wires
Batteries, Chargers, Holders
Discrete Semiconductor Products
View more