FQA10N80C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.1 Ohms


Features:

* 10A, 800V, R_DS(on)  = 1.1@V_GS  = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical  15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FQA10N80C	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	10	A
		6.32	A
IDM	Drain Current - Pulsed             (Note 1)	40	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	920	mJ
IAR	Avalanche Current                   (Note 1)	10	A
EAR	Repetitive Avalanche Energy         (Note 1)	24	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.0	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	240	W
		1.92	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

  These N-Channel enhancement mode power FQA10N80C field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQA10N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA10N80C is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.


Parameters:

Technical/Catalog Information	FQA10N80C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N80C FQA10N80C