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FQA11N90C LEADFREE, FQA11N90C_F109, FQA12P20

Table of contents:
Info of FQA11N90C LEADFREE
Info of FQA11N90C_F109
Info of FQA12P20

FQA11N90C LEADFREE, FQA11N90C_F109, FQA12P20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PN D/C:2010+

FQA11N90C LEADFREE, FQA11N90C_F109, FQA12P20 Picture

FQA11N90C LEADFREE, FQA11N90C_F109, FQA12P20 Datasheet download

Five Points

Part Number: FQA11N90C LEADFREE

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PN

D/C: 2010+

Description: MOSFET P-CH 200V 12.6A TO-3P

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FQA11N90C_F109 Parameters

Technical/Catalog Information	FQA11N90C_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA11N90C_F109 FQA11N90C_F109

FQA12P20 Parameters

Technical/Catalog Information	FQA12P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	470 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA12P20 FQA12P20

FQA12P20 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA12P20 Maximum Ratings

Symbol	Parameter	FQA12P20	Units
V_DSS	Drain-Source Voltage	-200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-12.6	A
I_D		-7.9	A
I_DM	Drain Current - Pulsed (Note 1)	-50.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
I_AR	Avalanche Current (Note 1)	-12.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	15	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	150	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.2	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA12P20 Features

* -12.6A, -200V, R_DS(on) = 0.47 @V_GS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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