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FQA16N25, FQA16N25C, FQA16N50

Table of contents:
Info of FQA16N25
Info of FQA16N25C
Info of FQA16N50

FQA16N25, FQA16N25C, FQA16N50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FQA16N25, FQA16N25C, FQA16N50 Datasheet download

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Part Number: FQA16N25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 500V 16A TO-3P

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FQA16N25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA16N25 Maximum Ratings

Symbol	Parameter	FQA16N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	18.5	A
I_D		11.7	A
I_DM	Drain Current - Pulsed (Note 1)	74	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	560	mJ
I_AR	Avalanche Current (Note 1)	18.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.52	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA16N25 Features

* 18.5A, 250V, R_DS(on) = 0.23 @V_GS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 23 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA16N25C Parameters

Technical/Catalog Information	FQA16N25C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	17.8A
Rds On (Max) @ Id, Vgs	270 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53.5nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA16N25C FQA16N25C

FQA16N25C General Description

FQA16N25C Maximum Ratings

Symbol	Parameter	FQA16N25C	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	17.8	A
I_D		11.3	A
I_DM	Drain Current - Pulsed (Note 1)	71.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	410	mJ
I_AR	Avalanche Current (Note 1)	17.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	18.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	180	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.45	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA16N25C Features

* 17.8A, 250V, R_DS(on) = 0.27 @V_GS = 10 V
* Low gate charge ( typical 41 nC)
* Low Crss ( typical 68 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA16N50 Parameters

Technical/Catalog Information	FQA16N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	320 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA16N50 FQA16N50

FQA16N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA16N50 Maximum Ratings

Symbol	Parameter	FQA16N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	16	A
I_D		10	A
I_DM	Drain Current - Pulsed (Note 1)	64	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	980	mJ
I_AR	Avalanche Current (Note 1)	16	A
E_AR	Repetitive Avalanche Energy (Note 1)	20	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	200	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.59	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA16N50 Features

* 16A, 500V, R_DS(on) = 0.32 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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