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FQA13N50, FQA13N50C, FQA13N50CF_F109

Table of contents:
Info of FQA13N50
Info of FQA13N50C
Info of FQA13N50CF_F109

FQA13N50, FQA13N50C, FQA13N50CF_F109 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

FQA13N50, FQA13N50C, FQA13N50CF_F109 Picture

FQA13N50, FQA13N50C, FQA13N50CF_F109 Datasheet download

Five Points

Part Number: FQA13N50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: MOSFET N-CH 500V 15A TO-3P

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FQA13N50 Parameters

Technical/Catalog Information	FQA13N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	13.4A
Rds On (Max) @ Id, Vgs	430 mOhm @ 6.7A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA13N50 FQA13N50

FQA13N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA13N50 Maximum Ratings

Symbol	Parameter	FQA13N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	13.4	A
I_D		8.5	A
I_DM	Drain Current - Pulsed (Note 1)	53.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
I_AR	Avalanche Current (Note 1)	13.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.52	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA13N50 Features

* 13.4A, 500V, R_DS(on) = 0.43 @V_GS = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical 25 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA13N50C Parameters

Technical/Catalog Information	FQA13N50C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	13.5A
Rds On (Max) @ Id, Vgs	480 mOhm @ 6.75A, 10V
Input Capacitance (Ciss) @ Vds	2055pF @ 25V
Power - Max	218W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA13N50C FQA13N50C

FQA13N50C General Description

FQA13N50C Maximum Ratings

Symbol	Parameter	FQA13N50C	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	13.5	A
I_D		8.5	A
I_DM	Drain Current - Pulsed (Note 1)	54	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	860	mJ
I_AR	Avalanche Current (Note 1)	13.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	21.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	218	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.56	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA13N50C Features

* 13.5A, 500V, R_DS(on) = 0.48 @V_GS = 10 V
* Low gate charge ( typical 43 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA13N50CF_F109 Parameters

Technical/Catalog Information	FQA13N50CF_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	480 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	2055pF @ 25V
Power - Max	218W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA13N50CF_F109 FQA13N50CF_F109

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