FQA11N40

MOSFET

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FQA11N40 Picture
SeekIC No. : 00164992 Detail

FQA11N40: MOSFET

floor Price/Ceiling Price

Part Number:
FQA11N40
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11.8 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.48 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 11.8 A


Features:

* 11.8A, 400V, RDS(on) = 0.48 @VGS  = 10 V
* Low gate charge ( typical  27 nC)
* Low Crss ( typical  20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
  


Specifications

Symbol
Parameter
FQA11N40
Units
VDSS
Drain-Source Voltage
400
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
11.8
A
7.5
A
IDM
Drain Current - Pulsed             (Note 1)
47
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
520
mJ
IAR
Avalanche Current                   (Note 1)
11.8
A
EAR
Repetitive Avalanche Energy         (Note 1)
16
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
4.5
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
160
W
1.28
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA11N40 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQA11N40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA11N40 is well suited for high efficiency switching DC/DC converters and switch mode power supplies. 


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