MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11.8 A |
Resistance Drain-Source RDS (on) : | 0.48 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-3P |
Symbol |
Parameter |
FQA11N40 |
Units |
VDSS |
Drain-Source Voltage |
400 |
V |
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11.8 |
A |
7.5 |
A | ||
IDM |
Drain Current - Pulsed (Note 1) |
47 |
A |
VGSS |
Gate-Source Voltage |
± 30 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
520 |
mJ |
IAR |
Avalanche Current (Note 1) |
11.8 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
16 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
160 |
W |
1.28 |
W/ | ||
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |