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FQA170N06, FQA17N40, FQA17P10

Table of contents:
Info of FQA170N06
Info of FQA17N40
Info of FQA17P10

FQA170N06, FQA17N40, FQA17P10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

FQA170N06, FQA17N40, FQA17P10 Datasheet download

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Part Number: FQA170N06

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: MOSFET P-CH 100V 18A TO-3P

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FQA170N06 Parameters

Technical/Catalog Information	FQA170N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	170A
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 85A, 10V
Input Capacitance (Ciss) @ Vds	9350pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	290nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA170N06 FQA170N06

FQA170N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA170N06 Maximum Ratings

Symbol	Parameter	FQA170N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	170	A
ID		120	A
IDM	Drain Current - Pulsed (Note 1)	680	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	990	mJ
IAR	Avalanche Current (Note 1)	170	A
EAR	Repetitive Avalanche Energy (Note 1)	37.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	375	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA170N06 Features

• 170A, 60V, RDS(on) = 0.0056Ω @VGS = 10 V
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 620 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQA17N40 Parameters

Technical/Catalog Information	FQA17N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	17.2A
Rds On (Max) @ Id, Vgs	270 mOhm @ 8.6A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA17N40 FQA17N40

FQA17N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA17N40 Maximum Ratings

Symbol	Parameter	FQA17N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	17.2	A
I_D		10.9	A
I_DM	Drain Current - Pulsed (Note 1)	68.8	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
I_AR	Avalanche Current (Note 1)	17.2	A
E_AR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.52	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA17N40 Features

* 17.2A, 400V, R_DS(on) = 0.27 @V_GS = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA17P10 Parameters

Technical/Catalog Information	FQA17P10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	190 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA17P10 FQA17P10

FQA17P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQA17P10 Maximum Ratings

Symbol	Parameter	FQA17P10	Units
V_DSS	Drain-Source Voltage	-100	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-18	A
I_D		-12.7	A
I_DM	Drain Current - Pulsed (Note 1)	-72	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	580	mJ
I_AR	Avalanche Current (Note 1)	-18	A
E_AR	Repetitive Avalanche Energy (Note 1)	2412	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	120	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.8	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA17P10 Features

* -18A, -100V, R _DS(on) = 0.19 @V_GS = -10 V
* Low gate charge ( typical 30 nC)
* Low Crss ( typical 100 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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