Position: Home > DataSheet > Index F > FQA Series > FQA13N50CF, FQA13N80, FQA140N10

Low Cost Custom Prototype PCB Manufacturer

FQA13N50CF, FQA13N80, FQA140N10

Table of contents:
Info of FQA13N50CF
Info of FQA13N80
Info of FQA140N10

FQA13N50CF, FQA13N80, FQA140N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:2006+

FQA13N50CF, FQA13N80, FQA140N10 Datasheet download

Five Points

Part Number: FQA13N50CF

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 2006+

Description: MOSFET N-CH 100V 140A TO-3P

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQA13N50CF Parameters

Technical/Catalog Information	FQA13N50CF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	480 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	2055pF @ 25V
Power - Max	218W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA13N50CF FQA13N50CF

FQA13N50CF General Description

These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild's proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology.

FQA13N50CF Maximum Ratings

Symbol	Parameter	FQA13N50CF	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	15	A
I_D		9.5	A
I_DM	Drain Current - Pulsed (Note 1)	60	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	860	mJ
I_AR	Avalanche Current (Note 1)	15	A
E_AR	Repetitive Avalanche Energy (Note 1)	21.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	218	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.56	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA13N50CF Features

* 15A, 500V, R_DS(on) = 0.48 @V_GS = 10 V
* Low gate charge (typical 43 nC)
* Low Crss (typical 20pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Fast recovery body diode (typical 100ns)

FQA13N80 Parameters

Technical/Catalog Information	FQA13N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	750 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	88nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA13N80 FQA13N80

FQA13N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA13N80 Maximum Ratings

Symbol	Parameter	FQA10N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	12.6	A
I_D		8.0	A
I_DM	Drain Current - Pulsed (Note 1)	50.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1100	mJ
I_AR	Avalanche Current (Note 1)	12.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	30	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	300	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA13N80 Features

* 12.6A, 800V, R_DS(on) = 0.75 @V_GS = 10 V
* Low gate charge ( typical 68 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA140N10 Parameters

Technical/Catalog Information	FQA140N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	140A
Rds On (Max) @ Id, Vgs	10 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds	7900pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	285nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA140N10 FQA140N10

FQA140N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motorcontrol.

FQA140N10 Maximum Ratings

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	140	A
ID		99	A
IDM	Drain Current - Pulsed (Note 1)	560	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1500	mJ
IAR	Avalanche Current (Note 1)	140	A
EAR	Repetitive Avalanche Energy (Note 1)	37.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	375	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA140N10 Features

• 140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 470 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components