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FQA14N30, FQA15N70, FQA160N08

Table of contents:
Info of FQA14N30
Info of FQA15N70
Info of FQA160N08

FQA14N30, FQA15N70, FQA160N08 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

FQA14N30, FQA15N70, FQA160N08 Datasheet download

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Part Number: FQA14N30

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: MOSFET N-CH 80V 160A TO-3P

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FQA14N30 Parameters

Technical/Catalog Information	FQA14N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	290 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	1360pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA14N30 FQA14N30

FQA14N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA14N30 Maximum Ratings

Symbol	Parameter	FQA14N30	Units
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	15	A
I_D		9.5	A
I_DM	Drain Current - Pulsed (Note 1)	60	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	600	mJ
I_AR	Avalanche Current (Note 1)	15	A
E_AR	Repetitive Avalanche Energy (Note 1)	16	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	160	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.28	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA14N30 Features

* 15A, 300V, R_DS(on) = 0.29 @V_GS = 10 V
* Low gate charge ( typical  30 nC)
* Low Crss ( typical  23 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA15N70 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA15N70 Maximum Ratings

Symbol	Parameter	FQA15N70	Units
V_DSS	Drain-Source Voltage	700	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	15	A
I_D		9.5	A
I_DM	Drain Current - Pulsed (Note 1)	60	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	950	mJ
I_AR	Avalanche Current (Note 1)	15	A
E_AR	Repetitive Avalanche Energy (Note 1)	30	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	300	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA15N70 Features

* 15A, 700V, R_DS(on) = 0.56 @V_GS = 10 V
* Low gate charge ( typical 70 nC)
* Low Crss ( typical 27 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA160N08 Parameters

Technical/Catalog Information	FQA160N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	7900pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	290nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA160N08 FQA160N08

FQA160N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQA160N08 Maximum Ratings

Symbol	Parameter	FQA160N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	160	A
ID		113	A
IDM	Drain Current - Pulsed (Note 1)	640	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1600	mJ
IAR	Avalanche Current (Note 1)	160	A
EAR	Repetitive Avalanche Energy (Note 1)	37.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	375	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA160N08 Features

• 160A, 80V, RDS(on) = 0.007Ω @VGS = 10 V
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 530 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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