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FQA10N80C, FQA10N90, FQA11N40

Table of contents:
Info of FQA10N80C
Info of FQA10N90
Info of FQA11N40

FQA10N80C, FQA10N90, FQA11N40 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:09+

FQA10N80C, FQA10N90, FQA11N40 Datasheet download

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Part Number: FQA10N80C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: 09+

Description: MOSFET N-CH 800V 10A TO-3P

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FQA10N80C Parameters

Technical/Catalog Information	FQA10N80C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	240W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N80C FQA10N80C

FQA10N80C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA10N80C Maximum Ratings

Symbol	Parameter	FQA10N80C	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	10	A
I_D		6.32	A
I_DM	Drain Current - Pulsed (Note 1)	40	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	920	mJ
I_AR	Avalanche Current (Note 1)	10	A
E_AR	Repetitive Avalanche Energy (Note 1)	24	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	240	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.92	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA10N80C Features

* 10A, 800V, R_DS(on) = 1.1@V_GS = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA11N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA11N40 Maximum Ratings

Symbol	Parameter	FQA11N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.8	A
I_D		7.5	A
I_DM	Drain Current - Pulsed (Note 1)	47	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	520	mJ
I_AR	Avalanche Current (Note 1)	11.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	16	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	160	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.28	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA11N40 Features

* 11.8A, 400V, R_DS(on) = 0.48 @V_GS = 10 V
* Low gate charge ( typical  27 nC)
* Low Crss ( typical  20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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