MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:07+
FQA18N50V, FQA18N50V2, FQA19N20 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-3P
D/C: 07+
Description: MOSFET N-CH 500V 20A TO-3P
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PDF/DataSheet Download
Datasheet: FQA18N50V
File Size: 639215 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQA18N50V2
File Size: 639215 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQA19N20
File Size: 735547 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQA18N50V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 265 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 277W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA18N50V2 FQA18N50V2 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
|
Symbol |
Parameter |
FQA18N50V2 |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
20 |
A |
|
12.7 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
80 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
330 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
20 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
27.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
277 |
W |
|
2.22 |
W/ | ||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
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