Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 900 V
Resistance Drain-Source RDS (on)
: 1.4 Ohms
Continuous Drain Current
: 11 A
Package / Case
: TO-3P
Features: • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQA11N90C |
Units |
| VDSS |
Drain-Source Voltage |
900 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
11.0 |
A |
|
6.9 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
44.0 |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
960 |
mJ |
| IAR |
Avalanche Current (Note 1) |
11.0 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
30 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
300 |
W |
|
2.38 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQA11N90C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA11N90C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA11N90C is well suited for high efficiency switch mode power supplies.
Parameters: | Technical/Catalog Information | FQA11N90C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Other Names | FQA11N90C
FQA11N90C
|
FQA11N90C Data Sheet
