MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:04 D/C:09+
FQU4N50TU, FQU4P25, FQU4P40TU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 04
D/C: 09+
Description: MOSFET N-CH 500V 2.6A IPAK
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PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU4P25
File Size: 599187 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQU4N50TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 2.6A |
| Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU4N50TU FQU4N50TU |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
| Symbol | Parameter | FQD4P25 / FQU4P25 | Units |
| VDSS | Drain-Source Voltage | -250 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-3.1 | A |
| -1.96 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -12.4 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 280 | mJ |
| IAR | Avalanche Current (Note 1) | -3.1 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -5.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
45 | W | |
| 0.36 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
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