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FQAF44N10, FQAF44N30, FQAF46N15

FQAF44N10, FQAF44N30, FQAF46N15 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-247F  D/C:09+

FQAF44N10, FQAF44N30, FQAF46N15 Picture

FQAF44N10, FQAF44N30, FQAF46N15 Datasheet download

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Part Number: FQAF44N10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 09+

Description: MOSFET N-CH 100V 33A TO-3PF

 

 
 
 
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About FQAF44N10

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Datasheet: FQAF44N10

File Size: 587003 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FQA10N60C

  • Pack: TO D/C: 03+& Qty: 300 Note: new &original?  Adddate: 2024-11-28
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  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • FQA10N80C

  • Vendor: Fairchild D/C: 07+& Qty: 530 Note: Stock on hand  Adddate: 2024-11-28
  • Inquire Now
  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
    (0)

About FQA10N60C

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Datasheet: FQA10N60C

File Size: 646153 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQAF46N15 Suppliers

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  • FQA10N60C

  • Pack: TO D/C: 03+& Qty: 300 Note: new &original?  Adddate: 2024-11-28
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • FQA10N80C

  • Vendor: Fairchild D/C: 07+& Qty: 530 Note: Stock on hand  Adddate: 2024-11-28
  • Inquire Now
  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
    (0)

About FQA10N60C

PDF/DataSheet Download

Datasheet: FQA10N60C

File Size: 646153 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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FQAF44N10 Parameters

Technical/Catalog InformationFQAF44N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs39 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max85W
PackagingTube
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF44N10
FQAF44N10

FQAF44N10 General Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQAF44N10 Maximum Ratings

Symbol
Parameter
FQAF44N10
Units
VDSS
Drain-Source Voltage
100
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
33
A
23.3
A
IDM
Drain Current - Pulsed             (Note 1)
132
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
530
mJ
IAR
Avalanche Current                   (Note 1)
33
A
EAR
Repetitive Avalanche Energy         (Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
6.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
85
W
0.57
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300

FQAF44N10 Features

* 33A, 100V, R DS(on) = 0.039  @VGS  = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical  85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
 

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