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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.14 100 52
°C/W °C/W °C/W
FDU8876 Features
• rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A • rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability
FDU8876 Typical Application
• DC/DC converters
FDU8878 Parameters
Technical/Catalog Information
FDU8878
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
40A
Rds On (Max) @ Id, Vgs
15 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds
880pF @ 15V
Power - Max
40W
Packaging
Tube
Gate Charge (Qg) @ Vgs
26nC @ 10V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDU8878 FDU8878
FDU8878 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
3.75 100 52
°C/W °C/W °C/W
FDU8878 Features
·rDS(ON) = 15mΩ, VGS = 10V, ID = 35A ·rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A ·High performance trench technology for extremely low rDS(ON) ·Low gate charge ·High power and current handling capability
FDU8878 Typical Application
· DC/DC converters
FDU8880 Parameters
Technical/Catalog Information
FDU8880
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
58A
Rds On (Max) @ Id, Vgs
10 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds
1260pF @ 15V
Power - Max
55W
Packaging
Tube
Gate Charge (Qg) @ Vgs
31nC @ 10V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDU8880 FDU8880
FDU8880 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
rDS(ON) = 10m , VGS = 10V, ID = 35A rDS(ON) = 13m?, VGS = 4.5V, ID = 35A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability