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FDU044AN03L, FDU068AN03L, FDU10008D/87251G1D16C

Table of contents:
Info of FDU044AN03L
Info of FDU068AN03L
Info of FDU10008D/87251G1D16C

FDU044AN03L, FDU068AN03L, FDU10008D/87251G1D16C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:08+

FDU044AN03L, FDU068AN03L, FDU10008D/87251G1D16C Picture

FDU044AN03L, FDU068AN03L, FDU10008D/87251G1D16C Datasheet download

Five Points

Part Number: FDU044AN03L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 08+

Description: MOSFET N-CH 30V 35A I-PAK

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FDU044AN03L Parameters

Technical/Catalog Information	FDU044AN03L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5160pF @ 15V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	118nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU044AN03L FDU044AN03L

FDU044AN03L Maximum Ratings

Symbol	Parameter	NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 35 35 21 Figure 4 690 160 1.07 -55 to 175	V V A A A A mJ W 1.07W/°C °C
ID	Drain Current Continuous (TC < 168°C, VGS = 10V) Continuous (TC < 167°C, VGS = 4.5V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

0.94
100
52

°C/W
°C/W
°C/W

FDU044AN03L Features

• r_DS(ON) = 3.6mΩ (Typ.), V_GS = 4.5V, I_D = 35A
• Q_g(5) = 48nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDU044AN03L Typical Application

• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters

FDU068AN03L Parameters

Technical/Catalog Information	FDU068AN03L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2525pF @ 15V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU068AN03L FDU068AN03L

FDU068AN03L Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 35 35 17 Figure 4 168 80 0.53W/ -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC < 154°C, VGS = 10V) Continuous (TC < 150°C, VGS = 4.5V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

1.88
100
52

°C/W
°C/W
°C/W

FDU068AN03L Features

• r_DS(ON) = 5.7mΩ (Typ.), V_GS = 4.5V, I_D = 35A
• Qg(5) = 24nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDU068AN03L Typical Application

• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters

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