MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDU6688, FDU6692, FDU6776A_F071 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 30V 84A I-PAK
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PDF/DataSheet Download
Datasheet: FDU6688
File Size: 123696 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDU6692
File Size: 86257 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDU044AN03L
File Size: 305497 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDU6688 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 84A |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 3845pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 56nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU6688 FDU6688 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 3) Pulsed (Note 1a) |
84 | A |
| 100 | |||
| PD | Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) |
83 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V
RDS(ON) = 6 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
DC/DC converter
Motor Drives
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±16 54 162 57 3.8 1.6 -55 to +175 |
V V | |
|
ID |
Drain Current Continuous Pulsed |
(Note 3) |
A | |
|
PD |
Power Dissipation for Single Operation |
(Note 1) (Note 1a) (Note 1b) |
W | |
|
TJ, TSTG |
Operating and Storage Temperature Range |
°C | ||
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