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Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11 100 52
°C/W °C/W °C/W
FDU2572 Features
• rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
FDU2572 Typical Application
• DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems
FDU3580 Parameters
Technical/Catalog Information
FDU3580
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25° C
7.7A
Rds On (Max) @ Id, Vgs
29 mOhm @ 7.7A, 10V
Input Capacitance (Ciss) @ Vds
1760pF @ 40V
Power - Max
1.6W
Packaging
Tube
Gate Charge (Qg) @ Vgs
79nC @ 10V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDU3580 FDU3580
FDU3580 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
FDU3580 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
80 ± 20 7.7 50 42 3.8 1.6 −55 to +175
V V A
W
°C
ID
Maximum Drain Current-Continuous Maximum Drain Current Pulsed
(Note 1a)
PD
Maximum Power Dissipation @TC = 25oC TA = 25oC TA = 25oC
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
FDU3580 Features
• 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V • Low gate charge (34nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
FDU3706 Parameters
Technical/Catalog Information
FDU3706
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
14.7A
Rds On (Max) @ Id, Vgs
9 mOhm @ 16.2A, 10V
Input Capacitance (Ciss) @ Vds
1882pF @ 10V
Power - Max
1.6W
Packaging
Tube
Gate Charge (Qg) @ Vgs
23nC @ 4.5V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDU3706 FDU3706
FDU3706 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.