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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDU6644 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 3)
Pulsed (Note 1a)
67
A
100
PD
Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)
68
W
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C
FDU6644 Features
67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.5 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (25 nC typical) High power and current handling capability