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FDU6612, FDU6612A, FDU6612A_NL

Table of contents:
Info of FDU6612
Info of FDU6612A
Info of FDU6612A_NL

FDU6612, FDU6612A, FDU6612A_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:06+

FDU6612, FDU6612A, FDU6612A_NL Datasheet download

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Part Number: FDU6612

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-251

D/C: 06+

Description: MOSFET N-CH 30V 9.5A I-PAK

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FDU6612A Parameters

Technical/Catalog Information	FDU6612A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9.5A
Rds On (Max) @ Id, Vgs	20 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 15V
Power - Max	1.3W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.4nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6612A FDU6612A

FDU6612A General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} , fast switching speed and extremely low RDS( in a small package.

FDU6612A Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 30 9.5 60 36 2.8 1.3 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDU6612A Features

· 30 A, 30 V R_DS(ON) = 20 mW @ V_GS = 10 V R_DS(ON) = 28 mW @ V_GS= 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely low RDS(ON)

FDU6612A Typical Application

· DC/DC converter
· Motor Drives

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