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FDU6696, FDU6N50, FDU6N50TU

Table of contents:
Info of FDU6696
Info of FDU6N50
Info of FDU6N50TU

FDU6696, FDU6N50, FDU6N50TU Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:TO-

FDU6696, FDU6N50, FDU6N50TU Datasheet download

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Part Number: FDU6696

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: TO-

Description: MOSFET N-CH 500V IPAK

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FDU6696 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

FDU6696 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ± 16 50 13 100 52 3.8 1.6 55 to +175	V
I_D	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)		A
P_D	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 1a) (Note 1b) (Note 1c)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDU6696 Features

· 50A, 30 V RDS(ON) = 8.0 mW @ VGS = 10 V RDS(ON) = 10.7 mW @ VGS = 4.5 V
· Low gate charge (17nC typical)
· Fast switching
· High performance trench technology for extremely low RDS(ON)

FDU6696 Typical Application

· DC/DC converter
· Motor drives

FDU6N50TU Parameters

Technical/Catalog Information	FDU6N50TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	900 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	940pF @ 25V
Power - Max	89W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16.6nC @ 10V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6N50TU FDU6N50TU

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