FDU044AN03L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 35 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.0039 Ohms


Features:

• r_DS(ON) = 3.6mΩ (Typ.), V_GS = 4.5V, I_D = 35A
• Q_g(5) = 48nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters


Specifications

Symbol	Parameter	NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 35 35 21 Figure 4 690 160 1.07 -55 to 175	V V A A A A mJ W 1.07W/°C °C
ID	Drain Current Continuous (TC < 168°C, VGS = 10V) Continuous (TC < 167°C, VGS = 4.5V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

0.94 100 52

°C/W °C/W °C/W

Parameters:

Technical/Catalog Information	FDU044AN03L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5160pF @ 15V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	118nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU044AN03L FDU044AN03L