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FDU6676ASNL, FDU6680, FDU6680A

Table of contents:
Info of FDU6676ASNL
Info of FDU6680
Info of FDU6680A

FDU6676ASNL, FDU6680, FDU6680A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO- D/C:TO-

FDU6676ASNL, FDU6680, FDU6680A Datasheet download

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Part Number: FDU6676ASNL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 30V 12A IPAK

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FDU6680 Parameters

Technical/Catalog Information	FDU6680
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	10 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1230pF @ 15V
Power - Max	1.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6680 FDU6680

FDU6680 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

FDU6680 Maximum Ratings

Symbol	Parameter		NDS9936	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 46 12 100 56 3.3 1.5 55 to +175	V V A W °C
I_D	Continuous Drain Current @T_C=25°C @T_A=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
P_D	Power Dissipation @T_C=25°C @T_A=25°C @T_A=25°C	(Note 3) (Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDU6680 Features

· 46 A, 30 V R_DS(ON) = 10 mW @ V_GS = 10 V R_DS(ON) = 15 mW @ V_GS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)

FDU6680 Typical Application

· DC/DC converter
· Motor Drives

FDU6680A General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

FDU6680A Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 56 14 100 60 2.8 1.3 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDU6680A Features

· 56 A, 30 V R_DS(ON) = 9.5 mW @ V_GS = 10 V R_DS(ON) = 13 mW @ V_GS = 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely low RDS(ON)

FDU6680A Typical Application

· DC/DC converter
· Motor Drives

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