FDU6030BL

MOSFET 30V N-Ch PowerTrench

product image

FDU6030BL Picture
SeekIC No. : 00162497 Detail

FDU6030BL: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDU6030BL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 42 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 42 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

·  42 A, 30 V RDS(ON) = 16 mW @ VGS = 10 V RDS(ON) = 22 mW @ VGS = 4.5 V
·  Low gate charge (22 nC typical)
·  Fast switching
·  High performance trench technology for extremely low RDS(ON)



Application

·  DC/DC converter
·  Motor drives



Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
42
10
100
50
3.8
1.6
55 to +175
V
V
A


W


°C
ID
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C
(Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDU6030BL N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.




Parameters:

Technical/Catalog InformationFDU6030BL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs16 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1143pF @ 15V
Power - Max1.6W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU6030BL
FDU6030BL



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Circuit Protection
Power Supplies - External/Internal (Off-Board)
Motors, Solenoids, Driver Boards/Modules
LED Products
Boxes, Enclosures, Racks
View more