MOSFET 30V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 42 A | ||
Resistance Drain-Source RDS (on) : | 0.016 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-251 | Packaging : | Tube |
Symbol |
Parameter |
NDS9936 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 42 10 100 50 3.8 1.6 55 to +175 |
V V A W °C | |
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed |
(Note 3) (Note 1a) (Note 1a) | ||
PD |
Power Dissipation @TC=25°C @TA=25°C @TA=25°C |
(Note 3) (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
This FDU6030BL N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Technical/Catalog Information | FDU6030BL |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 1143pF @ 15V |
Power - Max | 1.6W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDU6030BL FDU6030BL |