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FDU6612A

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00160834 Detail

FDU6612A: MOSFET 30V N-Ch PowerTrench

FDU6612A Data Sheet

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Part Number:
FDU6612A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 20 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 20 m Ohms


Features:

· 30 A, 30 V RDS(ON) = 20 mW @ VGS = 10 V RDS(ON) = 28 mW @ VGS = 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely low RDS(ON)


Application

· DC/DC converter
· Motor Drives


Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
30
9.5
60
36
2.8
1.3
55 to +175
V
V
A


W


°C
ID
 Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed		 (Note 3)
(Note 1a)
(Note 1a)
PD
 Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C		 (Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDU6612A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS( in a small package.




Parameters:

Technical/Catalog InformationFDU6612A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs20 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 660pF @ 15V
Power - Max1.3W
PackagingTube
Gate Charge (Qg) @ Vgs9.4nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU6612A
FDU6612A



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