FDU6296

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 8.8 m Ohms


Features:

50A, 30 V R _DS(ON) = 8.8 m     @ V_GS = 10 V
                   R _DS(ON) = 11.3  m @ V_GS = 4.5 V

Low gate charge

Fast switching

High performance trench technology for extremely
   low R_DS(ON)

Application

DC/DC converter
Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current @TC=25°C (Note 3)                                          @TA=25°C (Note 1a)                                          Pulsed         (Note 1a)	50	A
		15
PD	Power Dissipation @TC=25°C (Note 3)                              @TA=25°C (Note 1a)                              @TA=25°C (Note 1b)	100	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDU6296 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDU6296
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 15V
Power - Max	1.6W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31.5nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6296 FDU6296