FDU6512A

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 36 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 16 m Ohms


Features:

36 A, 20 V R_DS(ON) = 21 m @ V_GS = 4.5  V
                    R_DS(ON) = 31 m @ V_GS = 2.5 V 

Low gate charge (12 nC typical) 

Fast switching 

High performance trench technology for extremely
  low R_DS(ON)

Application

DC/DC converter 

Motor drives

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Continuous Drain Current @TC=25°C (Note 3)                                        @TA=25°C (Note 1a)                                            Pulsed   (Note 1a)	36	A
		10.7
PD	Power Dissipation @TC=25°C (Note 3)                              @TA=25°C (Note 1a)                              @TA=25°C (Note 1b)	100	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDU6512A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} , fast switching speed and extremely low R_DS(ON) in a small package.

Parameters:

Technical/Catalog Information	FDU6512A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10.7A
Rds On (Max) @ Id, Vgs	21 mOhm @ 10.7A, 4.5V
Input Capacitance (Ciss) @ Vds	1082pF @ 10V
Power - Max	1.6W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 4.5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6512A FDU6512A