FDU3580

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 7.7 A
Drain-Source Breakdown Voltage : 80 V
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.029 Ohms


Features:

• 7.7 A, 80 V. R_DS(ON) = 29 mΩ @ V_GS = 10 V R_DS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		80 ± 20 7.7 50 42 3.8 1.6 −55 to +175	V V A W °C
ID	Maximum Drain Current-Continuous Maximum Drain Current Pulsed	(Note 1a)
PD	Maximum Power Dissipation @TC = 25oC TA = 25oC TA = 25oC	(Note 1) (Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range

Description

This FDU3580 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET FDU3580 features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDU3580
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	7.7A
Rds On (Max) @ Id, Vgs	29 mOhm @ 7.7A, 10V
Input Capacitance (Ciss) @ Vds	1760pF @ 40V
Power - Max	1.6W
Packaging	Tube
Gate Charge (Qg) @ Vgs	79nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU3580 FDU3580