MOSFET 20V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-251 | Packaging : | Tube |
50 A, 20 V RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 11 m @ VGS = 4.5 V
RDS(ON) = 16 m @ VGS = 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low RDS(ON)
DC/DC converter
Motor Drives
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 20 | V |
VGSS | Gate-Source Voltage | ±12 | V |
ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
50 | A |
14.7 | |||
PD |
Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
60 | W |
44 | |||
1.6 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
This FDU3706 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDU3706 has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Technical/Catalog Information | FDU3706 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 14.7A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 16.2A, 10V |
Input Capacitance (Ciss) @ Vds | 1882pF @ 10V |
Power - Max | 1.6W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDU3706 FDU3706 |