FDU3706

MOSFET 20V N-Ch PowerTrench

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SeekIC No. : 00163415 Detail

FDU3706: MOSFET 20V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDU3706
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : TO-251


Features:

50 A, 20 V  RDS(ON) =   9 m @ VGS = 10 V          

                 RDS(ON) = 11 m @ VGS = 4.5 V  
                 RDS(ON) = 16 m @ VGS = 2.5 V  

Low gate charge  (16 nC)  

Fast Switching  

High performance trench technology for extremely
   low RDS(ON) 




Application

DC/DC converter

Motor Drives




Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID Continuous Drain Current  @TC=25°C  (Note 3)
                                          @TA=25°C  (Note 1a)
                                              Pulsed      (Note 1a)
50 A
14.7
PD

Power Dissipation   @TC=25°C  (Note 3)

                               @TA=25°C  (Note 1a)

                               @TA=25°C   (Note 1b)

60 W
44
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDU3706 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional  switching PWM controllers. FDU3706 has been optimized for  low gate charge, low RDS( ON) , fast switching speed and  extremely low RDS(ON) in a small package.




Parameters:

Technical/Catalog InformationFDU3706
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C14.7A
Rds On (Max) @ Id, Vgs9 mOhm @ 16.2A, 10V
Input Capacitance (Ciss) @ Vds 1882pF @ 10V
Power - Max1.6W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU3706
FDU3706



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