MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:07+
FDU6030BL, FDU6296, FDU6512A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 07+
Description: MOSFET N-CH 20V 10.7A I-PAK
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PDF/DataSheet Download
Datasheet: FDU6030BL
File Size: 76265 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FDU6296
File Size: 107802 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDU6512A
File Size: 76531 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDU6030BL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1143pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU6030BL FDU6030BL |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
|
Symbol |
Parameter |
NDS9936 |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 42 10 100 50 3.8 1.6 55 to +175 |
V V A W °C | |
|
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed |
(Note 3) (Note 1a) (Note 1a) | ||
|
PD |
Power Dissipation @TC=25°C @TA=25°C @TA=25°C |
(Note 3) (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| Technical/Catalog Information | FDU6296 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1440pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31.5nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU6296 FDU6296 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
50 | A |
| 15 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
100 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
50A, 30 V R DS(ON) = 8.8 m @ VGS = 10 V
R DS(ON) = 11.3 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
| Technical/Catalog Information | FDU6512A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 10.7A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 10.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1082pF @ 10V |
| Power - Max | 1.6W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU6512A FDU6512A |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID |
Continuous Drain Current @TC=25°C (Note 3) |
36 | A |
| 10.7 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
100 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V
RDS(ON) = 31 m @ VGS = 2.5 V
Low gate charge (12 nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
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