FDU8896

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-251
Continuous Drain Current : 94 A
Resistance Drain-Source RDS (on) : 5.7 m Ohms


Features:

• r_DS(ON) = 5.7mW, V_GS = 10V, I_D = 35A
• r_DS(ON) = 6.8mW, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low r_DS(ON)
• Low gate charge
• High power and current handling capability




Application

• DC/DC converters




Specifications

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 94 85 17 Figure 4 168 80 0.53 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, VGS = 10V) (Note 1) Continuous (TC = 25°C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

1.88 100 52

°C/W °C/W °C/W

Description

The FDU8896 is a N-channel PowerTrench® MOSFET.It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, lowrDS(ON) and fast switching speed.It can be used as DC/DC converters and its package is I-PAK.

There are some information about the features of FDU8896.(1)high performance trench technology for extremely low rDS(rDS(ON) is 5.7 m, VGS is 10 V, ID is 35 A)(ON);(2)low gate charge;(3)high power and current handling capability.

The following is its maximum ratings of FDU8896 at TC is 25.(1):drain to source voltage(VDSS) is 30 V;(2):gate to source voltage(VGS) is ±20 V;(3):drain current is 94 A when VGS is 10 V;(4):single pulse avalanche energy(EAS) is 168 mJ;(5):derate above 25 is 0.53 W/;(6):both operating and storage temperature are from -55 to 175.(7):the minimum of drain to source breakdown voltage(BVDSS) is 30 V at the condition of ID is 250 mA, VGS is 0 V;(8):gate to source leakage current(IGSS) is ±100 nA at VGS is ±20 V(9):the typical input capacitance(CISS) is 2525 pF at VDS is 15 V,VGS is 0 V,f is 1 MHz;(10):the typical rise time is106 ns at VDD is 15 V,ID is 35 A,VGS is 10 V and RGS is 6.2 W.

Parameters:

Technical/Catalog Information	FDU8896
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	94A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2525pF @ 15V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU8896 FDU8896