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FDU8770

MOSFET LOW_VOLTAGE

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SeekIC No. : 00160941 Detail

FDU8770: MOSFET LOW_VOLTAGE

FDU8770 Data Sheet

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Part Number:
FDU8770
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 3.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 35 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 3.3 m Ohms


Parameters:

Technical/Catalog InformationFDU8770
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs4 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 3720pF @ 13V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs73nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8770
FDU8770



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