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FDU8586

MOSFET 20V 35A 5.5 OHM NCH IPAK PO

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FDU8586: MOSFET 20V 35A 5.5 OHM NCH IPAK PO

FDU8586 Data Sheet

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Part Number:
FDU8586
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.004 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 35 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.004 Ohms


Parameters:

Technical/Catalog InformationFDU8586
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2480pF @ 10V
Power - Max77W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8586
FDU8586



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