MOSFET 25V N-Channel PowerTrench MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 35 A | ||
Resistance Drain-Source RDS (on) : | 11.6 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
This FDU8778 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Technical/Catalog Information | FDU8778 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 35A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 35A, 10V |
Input Capacitance (Ciss) @ Vds | 845pF @ 13V |
Power - Max | 39W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDU8778 FDU8778 |