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FDU8778

MOSFET 25V N-Channel PowerTrench MOSFET

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SeekIC No. : 00162495 Detail

FDU8778: MOSFET 25V N-Channel PowerTrench MOSFET

FDU8778 Data Sheet

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Part Number:
FDU8778
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 11.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 35 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 11.6 m Ohms


Features:

·  Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
·  Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
·  Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
·  Low gate resistance
·  RoHS compliant


Application

·  DC-DC for Desktop Computers and Servers
·  VRM for Intermediate Bus Architecture


Specifications

VDS Drain to Source Voltage .............................................25 V
VGS Gate to Source Voltage ...........................................±20 V
ID Drain Current -Continuous (Package Limited) ..............35 A
ID Drain Current-Continuous (Die Limited) .......................40 A
ID Drain Current-Pulsed (Note 1) ...................................145 A
EAS Single Pulse Avalanche Energy (Note 2) ..................24 mJ
PD Power Dissipation ......................................................39 W
TJ, TSTG Operating and Storage Temperature ...-55 to 175 °C


Description

This FDU8778 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.




Parameters:

Technical/Catalog InformationFDU8778
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs14 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 845pF @ 13V
Power - Max39W
PackagingTube
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8778
FDU8778



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