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The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices.
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The NTE56028 is a 40 Amp TRIAC is a TO220 type package designed primarily for fullwave AC con- trol applications such as lighting systems, heater controls, motor controls, and power supplies.
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This NTE56026 medium power TRIACs are bidirectional triode thyristors which may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate triggering. These NTE56026 ar...
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This NTE56024 medium power TRIACs are bidirectional triode thyristors which may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate triggering. These NTE56024 ar...
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This NTE56022 medium power TRIACs are bidirectional triode thyristors which may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate triggering. These NTE56022 ar...
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The NTE56019 and NTE56020 are 25 Amp TRIACs with a repetitive peak blocking of 200V and 400V respectively. These NTE56020 may be gate triggered from a blocking to conduction state for either polarity of applied voltage ...
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The NTE56019 and NTE56020 are 25 Amp TRIACs with a repetitive peak blocking of 200V and 400V respectively. These NTE56019 may be gate triggered from a blocking to conduction state for either polarity of applied voltage ...
Mfg:DSI D/C:n/a Vendor:Other Category:Other
The NTE56015 through NTE56018 series of TRIACs are high performance glass passivated PNPNdevices in
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The NTE56015 through NTE56018 series of TRIACs are high performance glass passivated PNPNdevices in
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The NTE5600 through NTE5607 TRIACs are designed primarily for fullwave AC control applications such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon gate controlled soli...
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The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO48 isolated stud TO48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor,...
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The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO48 isolated stud TO48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor,...
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The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO48 isolated stud TO48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor,...
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The NTE Metal Oxide Varistors NTE524V48 feature a barrier layer that gives the user fast response time. These NTE524V48have a high transient current handling capability when high voltage is applied. Static resistance is,...
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The NTE Metal Oxide Varistors NTE524V13 feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, ...
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The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.
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The NTE4999 of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices NTE4999 have become very important as a consequ...
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The NTE4998 of silicon Transient Suppressors designed to protect voltage sensitive compo- nents from high energy voltage transients. Transient over voltage suppressor devices NTE4998 have become very important as a cons...
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The NTE4903 of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices NTE4903 have become very important as a consequ...
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The NTE4902 of silicon Transient Suppressors designed to protect voltage sensitive compo- nents from high energy voltage transients. Transient over voltage suppressor devices NTE4902 have become very important as a cons...
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The NTE4900 is a zener overvoltage transient suppressor in an axial lead type package designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capabi...
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The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.
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The NTE388(NPN) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF largesignal amplifier applications required in military and industrial equipment to 240MHz.
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The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in military and industrial equipment to 300MHz.
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The NTE3470 is a monolithic READ Amplifier System for obtaining digital information from floppy disk storage. It is designed to accept the differential AC signal produced by the magnetic head and pro- duce a digital outp...
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The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul- tiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver or predriv...
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The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V largesignal amplifier applications in industrial and commercial FM equipment operating to 175MHz. This device is ideally s...
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The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
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The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
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The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz.
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The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communica- tions equipment op...
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The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz.
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The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz.
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The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxialbase complementary power transistors in a TO220 plastic package intended for use in power linear and switching applications.
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The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxialbase complementary power transistors in a TO220 plastic package intended for use in power linear and switching applications.
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The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.
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The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dualinline packages.
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The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared...
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The NTE3034A is designed for industrial processing and control applications such as light modulators, shaft or position encoders, and end tape detectors. The NTE3034A is designed to be used with the NTE3029A infrared em...
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The NTE Metal Oxide Varistors NTE2V010 feature a barrier layer that gives the user fast response time. These NTE2V010 have a high transient current handling capability when high voltage is applied. Static resistance is, ...
Mfg:NTE D/C:08+ Vendor:Other Category:Other
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
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The NTE2764 is a 65,536bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable ReadOnly Memory (EPROM) in a 28Lead DIP type package which operates from a single +5V supply, making it ideal for microprocesso...
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The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, lowfrequency switching and hammer driver applications.
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The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, lowfrequency switching and hammer driver applications.
Pack:DIP-24 D/C:03+ Vendor:Other Category:Other
The NTE2732A is a 32,768bits ultraviolet erasable and electrically programmable readonly memory (EPROM) organized as 4,096 words by 8 bits and manufactured using NChannel SiGate MOS processing. With its single +5V power ...
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The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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The NTE2716 is a 16,384bit (2048 x 8bit) Erasable and Electrically Reprogrammable PROM in a 24Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be repr...
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The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
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The NTE2708 is an ultraviolet lighterasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8bit length. This device is fabricated using Nchannel silicon gate technology for hig...
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The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
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The NTE2631 is a quad differential line driver constructed using Advanced LowPower Schottky processing in a 16Lead DIP type package designed for digital data transmission over balanced lines. This NTE2631 meets all the ...
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