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NTE270 (NPN)

Features: *High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V* CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA* Monolithic Construction with BuiltIn BaseEmitter Shunt ResistorSpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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SeekIC No. : 004436154 Detail

NTE270 (NPN): Features: *High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V* CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA* Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor...

NTE270 (NPN) Data Sheet

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Part Number:
NTE270 (NPN)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
* CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA
* Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor


Specifications

CollectorEmitter Voltage, VCEO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .100V
CollectorBase Voltage, VCB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . .100V
EmitterBase Voltage, VEB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V
Collector Current, IC
     Continuous  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . .10A
     Peak (Note 1)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .15A
Continuous Base Current, IB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .. . . . .500mA
Total Device Dissipation (TC = +25), PD  . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . ... . . . . .125W
Operating Junction Temperature Range, TJ  . . . . . . . . . . . . . . . . . . . . . . . . .  . . . .65 to +150
Storage Temperature Range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .65 to +150
Thermal Resistance, JunctiontoCase, RthJC  . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . . . .1.0/W
Thermal Resistance, JunctiontoAmbient, RthJA  . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .35.7/W
Note 1. Pulse Width = 5ms, Duty Cycle 10%.


Description

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.




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